Lester Eastman: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

High-Speed Direct Modulation of Semiconductor Lasers

Spencer, Robert M., Greenberg, Joseph, Eastman, Lester F., Tsai, Chin-Yi, O'Keefe, Sean S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

1997

Language:

english

File:

PDF, 2.88 MB

english, 1997

2

Surface and interface depletion corrections to free carrier-density determinations by hall measurements

Amitabh Chandra, Colin E.C. Wood, David W. Woodard, Lester F. Eastman

Journal:

Solid-State Electronics

Year:

1979

Language:

english

File:

PDF, 504 KB

english, 1979

3

Steady-state and transient electron transport within bulk wurtzite zinc oxide

Stephen K. O’Leary, Brian E. Foutz, Michael S. Shur, Lester F. Eastman

Journal:

Solid State Communications

Year:

2010

Language:

english

File:

PDF, 292 KB

english, 2010

4

Hot electron induced degradation of undoped AlGaN/GaN HFETs

Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, Lester F. Eastman

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 180 KB

english, 2003

5

Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review

Stephen K. O'Leary, Brian E. Foutz, Michael S. Shur, Lester F. Eastman

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2006

Language:

english

File:

PDF, 2.01 MB

english, 2006

6

The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

Stephen K. O’Leary, Brian E. Foutz, Michael S. Shur, Lester F. Eastman

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2010

Language:

english

File:

PDF, 884 KB

english, 2010

7

Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Burm, Jinwook, Chu, Kenneth, Davis, William A., Schaff, William J., Eastman, Lester F., Eustis, Tyler J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 298 KB

english, 1997

8

Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers

Lester, L.F., Schaff, W.J., Song, X., Eastman, L.F.

Journal:

IEEE Photonics Technology Letters

Year:

1991

Language:

english

File:

PDF, 329 KB

english, 1991

9

High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching

Lester, L.F., Schaff, W.J., Offsey, S.D., Eastman, L.F.

Journal:

IEEE Photonics Technology Letters

Year:

1991

Language:

english

File:

PDF, 266 KB

english, 1991

10

GaN Materials for High Power Microwave Amplifiers

Eastman, Lester F., chu, Kenneth, smart, Joseph, Shealy, J. Richard

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 253 KB

english, 1998

11

Near-Infrared Selective and Angle-Independent Backscattering from Magnetite Nanoparticle-Decorated Diatom Frustules

Li, Haiyan, Jiang, Bin, Yang, Xiulun, Eastman, Micah, Liu, Yuming, Wang, Linhui, Campbell, Jeremy, Lampert, Lester, Wang, Ruikang K., Rorrer, Gregory L., Jiao, Jun

Journal:

Year:

2014

Language:

english

File:

PDF, 4.27 MB

english, 2014

12

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (5-7 Aug. 1991)] [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - High-speed short cavity strained-layer multiple quantum well lasers

Lester, L.F., Schaff, W.J., Song, X., Offsey, S.D., Eastman, L.F.

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

13

SPIE Proceedings [SPIE Semiconductors '92 - Somerset, NJ (Sunday 22 March 1992)] High-Speed Electronics and Optoelectronics - Modulation characteristics of short-cavity strained-layer lasers

Lester, Luke F., O'Keefe, Sean S., Schaff, William J., Eastman, Lester F., Bowers, John E., Mishra, Umesh K.

Year:

1992

Language:

english

File:

PDF, 664 KB

english, 1992

14

Sample preparation technique for cross-sectional transmission electron microscopy of quantum wire structures

Yu-Pei Chen, Jason D. Reed, Sean S. O'Keefe, William J. Schaff, Lester F. Eastman

Journal:

Microscopy Research and Technique

Year:

1993

Language:

english

File:

PDF, 363 KB

english, 1993

15

Steady-state LPE growth of GaAs

Stephen I. Long, Joseph M. Ballantyne, Lester F. Eastman

Journal:

Journal of Crystal Growth

Year:

1974

Language:

english

File:

PDF, 746 KB

english, 1974

16

Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy

David J. Lawrence, Lester F. Eastman

Journal:

Journal of Crystal Growth

Year:

1975

Language:

english

File:

PDF, 852 KB

english, 1975

17

An analysis of GaAs LPE growth methods by a diffusion limited growth model

Stephen I. Long, Joseph M. Ballantyne, Lester F. Eastman

Journal:

Journal of Crystal Growth

Year:

1976

Language:

english

File:

PDF, 518 KB

english, 1976

18

Purity of GaAs grown by LPE in a graphite boat

Hadis Morkoc, Lester F. Eastman

Journal:

Journal of Crystal Growth

Year:

1976

Language:

english

File:

PDF, 433 KB

english, 1976

19

Electrical characterization and alloy scattering measurements of LPE GaxIn1-xAs/InP for high frequency device applications

James D. Oliver Jr., Lester F. Eastman, Peter D. Kirchner, William J. Schaff

Journal:

Journal of Crystal Growth

Year:

1981

Language:

english

File:

PDF, 419 KB

english, 1981

20

Analysis of abrupt emitter-base heterojunctions by multi-flux method and self-consistent solution of Schrödinger and Poisson equations

Melih Özaydin, Lester F. Eastman

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

21

Non-equilibrium carrier transport in the base of heterojunction bipolar transistors

Melih Özaydin, Lester F Eastman

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 527 KB

english, 1996

22

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Craig H Swartz, Randy P Tompkins, Nancy C Giles, Thomas H Myers, Hai Lu, William J Schaff, Lester F Eastman

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 385 KB

english, 2004

23

The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient

Walid A. Hadi, Stephen K. O’Leary, Michael S. Shur, Lester F. Eastman

Journal:

Solid State Communications

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

24

Polar optical phonon instability and intervalley transfer in III–V semiconductors

Stephen K O'Leary, Brian E Foutz, Michael S Shur, Lester F Eastman

Journal:

Solid State Communications

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

25

Monte Carlo simulation of electron transport in wurtzite aluminum nitride

Stephen K. O'Leary, Brian E. Foutz, Michael S. Shur, Udayan V. Bhapkar, Lester F. Eastman

Journal:

Solid State Communications

Year:

1998

Language:

english

File:

PDF, 681 KB

english, 1998

26

Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

Jeonghyun Hwang, William J. Schaff, Bruce M. Green, Hoyoung Cha, Lester F. Eastman

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 272 KB

english, 2004

27

Recessed gate GaN MODFETs

Jinwook Burm, William J. Schaff, Glenn H. Martin, Lester F. Eastman, Hiroshi Amano, Isamu Akasaki

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 253 KB

english, 1997

28

GaN/SiC heterojunction bipolar transistors

William J Schaff, Hong Wu, Choudhury Jayant Praharaj, Michael Murphy, Tyler Eustis, Brian Foutz, Oliver Ambacher, Lester F Eastman

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 173 KB

english, 2000

29

Electrical properties of InGaN grown by molecular beam epitaxy

William J. Schaff, Xiaodong Chen, Dong Hao, Kris Matthews, Troy Richards, Lester F. Eastman, Hai Lu, Clara Ji-Hyun Cho, Ho-Young Cha

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 656 KB

english, 2008

30

Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis

Stephen K. O’Leary, Brian E. Foutz, Michael S. Shur, Lester F. Eastman

Journal:

Journal of Electronic Materials

Year:

2003

Language:

english

File:

PDF, 162 KB

english, 2003

31

Subnanometer Analysis and Modeling of MBE Grown InP Based MODFETs

Matthew Seaford, Scott Massie, Dave Hartzell, Glenn Martin, Warren Wu, John Tucker, Lester Eastman

Journal:

Journal of Electronic Materials

Year:

1997

Language:

english

File:

PDF, 780 KB

english, 1997

32

A study of the conduction properties of a rectifying nGaAs-n(Ga, Al)As heterojunction

Amitabh Chandra, Lester F. Eastman

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 476 KB

english, 1980

33

1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications

Joseph Greenberg, Lester F. Eastman

Journal:

Microelectronics Journal

Year:

1997

Language:

english

File:

PDF, 627 KB

english, 1997

34

Scattering of electrons at threading dislocations in GaN

Weimann, Nils G., Eastman, Lester F., Doppalapudi, Dharanipal, Ng, Hock M., Moustakas, Theodore D.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 348 KB

english, 1998

35

Photodetectors based on intersubband transitions using III-nitride superlattice structures

Hofstetter, Daniel, Baumann, Esther, Giorgetta, Fabrizio R, Théron, Ricardo, Wu, Hong, Schaff, William J, Dawlaty, Jahan, George, Paul A, Eastman, Lester F, Rana, Farhan

Journal:

Journal of Physics Condensed Matter

Year:

2009

Language:

english

File:

PDF, 1.16 MB

english, 2009

36

Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InP

James D. Oliver, Lester F. Eastman

Journal:

Journal of Electronic Materials

Year:

1980

Language:

english

File:

PDF, 1.21 MB

english, 1980

37

A THz-range planar NDR device utilizing ballistic electron acceleration in GaN

Barbaros Aslan, Lester F. Eastman

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 769 KB

english, 2011

38

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

Young Chul Choi, Milan Pophristic, Ho-Young Cha, Boris Peres, Michael G. Spencer, Lester F. Eastman

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

39

Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

Offsey, S.D., Schaff, W.J., Lester, L.F., Eastman, L.F., McKernan, S.K.

Journal:

IEEE Journal of Quantum Electronics

Year:

1991

Language:

english

File:

PDF, 992 KB

english, 1991

40

Ballistic Electrons in Semiconductors

Heiblum, Mordehai, Eastman, Lester F.

Journal:

Scientific American

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

41

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Lu, Hai, Schaff, William J., Eastman, Lester F., Stutz, C. E.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

42

GaN/AlN-based quantum-well infrared photodetector for 1.55 Î¼m

Hofstetter, Daniel, Schad, Sven-Silvius, Wu, Hong, Schaff, William J., Eastman, Lester F.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

43

Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

OâLeary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 284 KB

english, 2005

44

Transient electron transport in wurtzite GaN, InN, and AlN

Foutz, Brian E., OâLeary, Stephen K., Shur, Michael S., Eastman, Lester F.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 411 KB

english, 1999

45

Electron transport in wurtzite indium nitride

OâLeary, Stephen K., Foutz, Brian E., Shur, Michael S., Bhapkar, Udayan V., Eastman, Lester F.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 322 KB

english, 1998

46

SPIE Proceedings [SPIE High-Speed Electronics and Device Scaling - San Diego, United States (Sunday 18 March 1990)] High-Speed Electronics and Device Scaling - Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs

Chao, P. C., Ho, Pin, Duh, K. H., Smith, P. M., Ballingall, J. M., Jabra, Amani A., Lewis, N., Hall, E. L., Eastman, Lester F.

Year:

1990

Language:

english

File:

PDF, 368 KB

english, 1990

47

Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer Quality

Shi, Junxia, Eastman, Lester F.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 407 KB

english, 2011

48

Improvement on epitaxial grown of InN by migration enhanced epitaxy

Lu, Hai, Schaff, William J., Hwang, Jeonghyun, Wu, Hong, Yeo, Wesley, Pharkya, Amit, Eastman, Lester F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 273 KB

english, 2000

49

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors

Sierakowski, Andrej J., Eastman, Lester F.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 224 KB

english, 1999

50

Surface chemical modification of InN for sensor applications

Lu, Hai, Schaff, William J., Eastman, Lester F.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 231 KB

english, 2004